Hi-k Grade Aluminum and Hafnium Dielectric Precursors Available from Rohm and Haas

Rohm and Haas Electronic Materials and UP Chemical Company today announced the commercial availability of Hi-k Grade aluminum and hafnium precursors for the production of high-k dielectric films.

The two companies will initially focus on supplying Hi-k Grade aluminum and hafnium precursors to global markets, but are also uniquely positioned to expand their precursor line to support future CVD and ALD technologies. Rohm and Haas Electronic Materials will use UP Chemical Company’s proprietary technology to manufacture Hi-k Grade products. Rohm and Haas Electronic Materials’ manufacturing processes are meticulously qualified to the exacting manufacturing standards of UP Chemical Company. The two companies will coordinate their quality assurance efforts to ensure a smooth and transparent availability of Hi-k Grade precursors worldwide.

This announcement builds on the 1998 Investment Agreement between Rohm and Haas and UP Chemical that established Rohm and Haas as the supplier of these technologies to the global market outside Korea. “We realized the potential benefits of UP Chemical Company’s patented and proprietary precursors early on and strategically invested in this Korean company” said Dr. Yi Hyon Paik, President, Rohm and Haas Electronic Materials Microelectronic Technologies. “Rohm and Haas’ investment in UP Chemical Company fostered the development of novel CVD materials for the Korean market where the use of aluminum and hafnium precursors is growing rapidly” continued Dr. Paik.

Rohm and Haas Electronic Materials, through its Microelectronic Technologies business unit, is a leading supplier of high-purity MOCVD precursors to the compound semiconductor industry. Emphasizing product consistency and quality, which is evident by its ISO-9001-2000 certification, the company has developed a unique combination of patented and proprietary purification processes for its precursors. UP Chemical Company specializes in DRAM and high-k gate dielectric precursors based on aluminum, hafnium, tantalum and titanium.

“We are excited that the strengths of our two companies will provide the critical materials needed for advanced deposition processes” said Dr. Hyun Koock Shin, President, of UP Chemical Company. “We clearly recognize that further advancements in semiconductor processing will require new and improved CVD precursors. The synergies arising from our relationship with Rohm and Haas Electronic Materials will benefit the global semiconductor industry well into the future.”

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