Dow Corning Compound Semiconductor Solutions (DCCSS) has developed technology to grow 76 mm diameter 4H-SiC crystals that are free of micropipe defects.
Crystals made from the new zero micropipe technology are now made routinely and supply the DCCSS 76 mm 4H-SiC wafer and epitaxy manufacturing line.
Micropipe defects are highly focused upon as they are killer defects in semiconductor SiC devices. A supply of SiC substrates free of micropipes establishes the potential to manufacture SiC devices with higher yields than what has been possible with SiC substrates available in the past.
“Dow Corning will continue to invest in the advancement of our SiC technology to support our customers’ efforts in achieving their goals,” said Fred Buether, Commercial Manager. “We’re using our technology experience to develop advanced application solutions for the power electronics market that result in innovative, energy efficient products that are cost effective.”