Research and Markets (http://www.researchandmarkets.com/research/2c502d/silicon_carbide_v) has announced the addition of John Wiley and Sons Ltd's new book "Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications" to their offering.
This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon.
The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles.
The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
Key Topics Covered:
- Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution
- Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds
- Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique
- Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects
- Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches
- EPR Identification of Intrinsic Defects in 4H-SiC
- Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide
- Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC
- Characterization of defects in silicon carbide by Raman spectroscopy
- Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation
- Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers
- Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation
- Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation
- Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors
- Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems
- Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces
- Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS
- Epitaxial Graphene: an new Material
- Density Functional Study of Graphene Overlayers on SiC