Siltronic, a company specializing in silicon wafers, has inked a deal with imec, a nanoelectronics research institute, to develop gallium nitride-based silicon wafers for next-generation power semiconductors and LEDs.
Gallium nitride (GaN) is a high-quality material and ideal for advanced power semiconductors and optoelectronics. It has excellent thermal conductivity, high breakdown voltage and greater electron mobility. The material has a wide range of applications, including energy-saving kitchen appliances, electric vehicles, solar power systems and wind power turbines.
Products with GaN/(Al)GaN layers show efficient switching behavior, but the GaN technology still requires additional improvement to be economically competitive. Hence, to reach the objective, low-cost and efficient manufacturing techniques are required to deposit GaN/(Al)GaN layers on silicon wafers.
As a part of imec’s GaN-on-Si research program, Siltronic’s expertise in epitaxial deposition on silicon substrates will help in efficient production of 200 mm wafers using the GaN technology. Other contributors of the research initiative include substrate manufacturers, silicon compound producers, foundries and integrated device manufacturers. Siltronic will utilize imec’s technical resources and facilities in Leuven, Belgium.
Source: http://www.siltronic.com/int/en/home/index.jsp