In this webinar they discuss their recent achievements regarding failure analysis (FA) of microelectronic devices using unique approaches. The presentation is divided into two parts. The first part will include FA results on integrated circuits (IC) based on state-of-the-art 14 nm node technology.
The focus will be on well-controlled orthogonal and planar IC delayering using gas-assisted Xe plasma FIB etching. In the next step TEM lamellae are prepared with Ga and Xe plasma FIB. Particular attention will be paid to the preparation of front- and back-side artifact-free lamellae. In the second part we will present FA results on advanced packaging technologies using Xe plasma FIB.
Cross-sections with dimensions exceeding 100 µm will be demonstrated, emphasizing the mitigation of FIB artifacts using the proprietary Rocking stage technology and special masking methods. These approaches allow for processing of even the most challenging packages.