Posted in | Semiconductor | Electronics

Mitsubishi Electric Develops New GaN High Electron Mobility Transistors

Mitsubishi Electric Corporation (TOKYO: 6503) announced today it has developed three models of gallium nitride (GaN) high electron mobility transistors (HEMTs) with 10W, 20W and 40W outputs.

The three models are for L to C band (0.5~6 GHz) amplifiers, which are incorporated into base stations for mobile phones, very small aperture terminals and other transmission equipment. Sample shipments will begin from August 2010.

For microwave transmitters, gallium arsenide (GaAs) power amplifiers are most commonly used, but gallium nitride is now garnering more attention, owing to its high breakdown voltage and high saturated electron speed. In March 2010, Mitsubishi Electric became the first company in the world to manufacture GaN HEMTs, launching four models for C-band space applications. HEMTs that use GaN have higher power density, which helps save energy and contributes to making transmitters more compact and lightweight, and expanded operating life.

Product Features

1) GaN HEMT for high-output, high-efficiency, high voltage operation

  • Lineup of 10 W, 20 W and 40W output amplifiers
  • Suitable for L to C bands (0.5~6.0 GHz)
  • Power added efficiency of 46% or higher
  • High-voltage operation of 47 V

2) Small sized package of 4.4 mm × 14.0 mm

  • Small sized package helps reduce mounting surface in amplifiers


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