Dow Corning today announced that it will begin production of 100 mm silicon carbide (SiC) epitaxy, providing a single source for SiC substrates used in power electronics device manufacturing.
The new product expands Dow Corning’s product line beyond its existing offerings of 76 mm SiC wafers and epitaxy and 100 mm SiC wafers.
Dow Corning supplies SiC and silicone materials that can be used in high power applications such as high-tech communications, solar and wind energy systems, large scale electrical distribution grids, vehicles, and academic research.
“We are committed to supporting the success of our customers by developing products that enhance performance while being cost effective,” said Fred Buether, Commercial Manager, Dow Corning Compound Semiconductor Solutions. “Dow Corning is committed to continuing its leadership in supplying materials solutions to a broad cross section of the global electronics industry. Our global expertise and collaborative approach enable us to deliver solutions that reliably perform, time after time.”