ASM International declared that it has obtained multiple system procurement orders from a major Asia-based manufacturer for its plasma enhanced atomic layer deposition (PEALD) reactor.
The company has also qualified a novel oxide use for PEALD SiO layer, aimed for high volume production at the 2X nm node and below. The latest application is likely to be used for high volume production by 2911 end with another Asian developer.
Tominori Yoshida, who works as General Manager of ASM's Plasma Products Business Unit, stated that the novel PEALD technology is experiencing strong market corroboration, offering high volume businesses from several leading memory manufacturers. He mentioned that the company’s growth initiatives and extending IP portfolio demonstrate its technology expertise. He added that the easy-to-use PEALD applications have enabled them to support memory developers as they shift to the demanding 1X nm node.
The PEALD reactors procured by the client will be installed in several plants in Asia and will be used for high volume production. The systems will be utilized to buildup dielectrics for lithography double patterning purposes at the 3Xnm technology node and below. The purchase order depicts the second leading developer to employ the PEALD reactor for double patterning applications in high volume production.
The PEALD systems are capable of depositing dielectrics such as SiO, SiCN and SiN. A significant benefit of PEALD method is its capability to offer conformal slim films at minimum temperatures. This feature is highly useful for double patterning lithography technologies which involve deposition of slim dielectrics on temperature-responsive photoresists for minimizing pitch and controlling crucial dimensions.
The systems to be supplied by ASM include several PEALD reactors executed on the XP platform, an established platform that can be used with plasma enhanced chemical vapor deposition, PEALD reactors or thermal ALD.