In this webinar we discuss our recent achievements regarding failure analysis (FA) of microelectronic devices using our unique approaches. The presentation is divided into two parts. The first part will include FA results on integrated circuits (IC) based on state-of-the-art 14 nm node technology.
SUSS MicroTec, a leading supplier of equipment and process solutions for the semiconductor and related markets, today announced the launch of a new UV-LED lamp house for use in its first exposure tools, which have a leading position in the market for more than fifty years.
The Hiden TPD Workstation provides a versatile platform for precisely controlled thermal desorption studies(TDS) in the UHV pressure regime through a temperature range from 50 ºC to 1000 ºC.
Polymer semiconductors have the potential to be used as a key part in plastic electronics of the future. These semiconductors can be processed economically on large-area and mechanically flexible substrates.
UCSB researchers have used modern theoretical methods to detect particular defects that hinder the performance of a light-emitting diode (LED). The characterization of such defects present in the LED’s atomic structure could result in the development of longer lasting and more efficient LED lighting.
Researchers at Tohoku University have used a new scheme of spin-orbit-torque-induced (SOT-induced) magnetization switching to develop a unique magnetic memory device that can store data without power supply. The study was headed by Professor Hideo Ohno and Associate Professor Shunsuke Fukami of Tohoku University.
Fairchild, a leading global supplier of high-performance semiconductor solutions, today launched the flagship device of the company’s newest generation of 100V N-channel power MOSFETs, the FDMS86181 100V Shielded Gate PowerTrench® MOSFET.
Heterostructures (referred to as Van der Waals {VdW}) are attracting a great deal of attention due to their diverse physical and chemical properties. A VdW heterostructure is assembled by stacking two or more different 2D semiconducting crystals on top of each other.
AIXTRON SE, a worldwide leading provider of deposition equipment to the semiconductor industry, announced today that one of Korea’s leading electronics companies, LG Innotek has selected a AIX G5 WW (Warm-Wall) reactor for the development of silicon carbide (SiC) epitaxial wafers aimed mainly at power devices for automotive and renewable energy applications. The system configured for 8x6-inch substrates was delivered in the fourth quarter 2015.
When single crystals, especially silicon wafers, are fractured or broken up they pose a number of serious issues. The tip of the crack spreads at an atomic scale, resulting in chemical bonds breaking, the formation of crack fronts via the micrometer-scale crystal, and a culmination of severe wafer shattering on the macroscopic scale.
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