Indium Corporation and Kyzen hosted a technical seminar on April 29 in Hsinchu, Taiwan.
In the past, high voltage (HV) discrete device and product development consisted of a long, serial approach where technologies were developed in TCAD*, physical parts fabricated and packaged, measurements performed and an iterative calibration cycle launched.
SUSS MicroTec, a global supplier of equipment and process solutions for the semiconductor industry and related markets, has recently delivered a newly developed coater/developer tool to an Asian packaging foundry (OSAT).
Today, at the Global Semiconductor Alliance (GSA) Executive Forum in Munich, Fairchild formally announced the acquisition of Xsens, a leading global supplier of 3D motion tracking products for the industrial, health, fitness and entertainment markets.
Toshiba Corporation today announced that it will demolish the No. 2 semiconductor fabrication facility (Fab 2) at Yokkaichi Operations, the company's NAND Flash memory plant in Mie prefecture, Japan, and replace it with a new fab on the same site.
Demand for gallium is forecast to rise rapidly between 2014 and 2020 as general lighting moves away from incandescent and fluorescent lamps to light-emitting diodes (LEDs). This strong growth is not, however, likely to result in any tightness in supply as the market is oversupplied and likely to remain so.
SEMATECH, the global consortium of semiconductor manufacturers, today announced the appointment of Satyavolu Papa Rao as Director of Process Technology. In this key role, Papa Rao will serve as the operational lead, overseeing the strategic development of SEMATECH’s manufacturing, process, materials and ESH-related activities.
Dow Corning, a global leader in silicon and wide-bandgap semiconductor technology, today established a higher industry standard for silicon carbide (SiC) crystal quality by introducing a product grading structure that specifies ground-breaking new tolerances on killer device defects, such as micropipe dislocations (MPD), threading screw dislocations (TSD) and basal plane dislocations (BPD).
Samsung Electronics, Co., Ltd., a global leader in memory semiconductor technology, today announced that its memory fabrication line in Xi’an China has begun full-scale manufacturing operations. The new facility will manufacture Samsung’s advanced NAND flash memory chips: 3D V-NAND.
Vishay Intertechnology, Inc. today introduced the industry's first 150 V n-channel MOSFET in the compact, thermally enhanced PowerPAK® SC-70 package. Offering the industry's lowest on-resistance at 10 V in the 2 mm by 2 mm footprint area, the Vishay Siliconix SiA446DJ is designed to increase efficiency by reducing conduction and switching losses in a wide range of space-constrained applications.
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