Capricorn Cleantech Fund, LRM, and Robert Bosch Venture Capital (RBVC) have jointly collaborated to invest € 4 million in EpiGaN to start volume production of GaN-on-Si wafers. The GaN-on-Si is an epitaxial material useful for advanced power electronics.
For over 10 years, the founders of EpiGaN collaborated to develop advanced GaN-on-Si technology on 4” as well as 6” wafers at imec. EpiGaN has received a part of the license for the advanced GaN-on-Si technology. A consortium of investors have joined hands with the founders of EpiGaN to utilize the GaN-on-Si technology for improving efficiency of power management, realizing renewable energy sources, or allowing clean technologies for transportation for minimum environmental impact.
The CEO of EpiGaN, Dr Marianne Germain stated that EpiGaN has showed the ability of its novel material to support the performance of equipment operating either in high current, high voltage or high frequency. He added that EpiGaN can deliver the high-quality material in huge commercial volumes to industrial clients.
Marc Lambrechts, a future member of the board of EpiGaN, stated that power conversion is vital for several cleantech applications, including solar inverters, energy-efficient power supplies, electric or hybrid vehicles, wind energy and smart grids. He added that EpiGaN clients can realize the advantages offered by GaN-on-silicon technology such as increased consistency, higher efficiency, and decreased system weight and size.
EpiGaN will establish its own production capacity and expand its market supply with investors support. The 4” and 6” GaN-on-Si wafers utilized for RF or high voltage applications are offered by EpiGaN. In addition, the company is developing a 200 mm wafer technology. It will carry out its activities at the Research Campus Hasselt in Limburg.
Stijn Bijnens, CEO of LRM, stated that EpiGaN will help develop high-tech solutions for the renewable energy sector, an area where Limburg wishes to expand.
The President and CEO of imec, Luc Van den Hove stated that imec has developed Si substrates using GaN technology for its cost efficiency. He added that this long-term research project will generate a high-potential spin-off, thus launching imec technology into the market.
Source: http://www2.imec.be/