JEOL, the industry's leading manufacturer of EDX detectors, has developed a wide range of Silicon Drift Detectors (SDDs), with active areas ranging from 60 mm2 to 158 mm2. These detectors deliver exceptional EDX analytical performance across a broad spectrum of materials, offering solid angles of 2.2 sr or higher, depending on the specific TEM/STEM configuration.
Thanks to JEOL’s proprietary “Lossless Drift Compensation,” large-pixel EDX maps can be acquired on the fly—even at atomic resolution and under varying accelerating voltages. This is particularly beneficial for beam-sensitive and 2D materials. JEOL’s spectrum imaging technology captures both the full spectrum data set and individual spectral slices, enabling users to selectively sum frames, which is especially useful during in-situ experiments.
For enhanced control, the optional JEOL/IDES EMD Synchrony 50 ns electrostatic beam blanker regulates electron dose at each pixel, effectively eliminating the flyback-related artifacts common to other EDS systems. Quantitative analysis can be performed using either K-factors or ζ (zeta) factors, ensuring the highest possible accuracy for your specific sample.
Key Features
- Auto-playback of any number of EDX spectral frames from any point in the experiment.
- Data output can be done in Word, PowerPoint, or PDF format so that collaborators can easily access your results. WYSIWYG.
- Flexible EDX linescan extraction allowing the data to be summed and overlaid directly on the image.
- Large solid angle Single or Dual SDDs.
- Lossless drift compensation for unparalleled fast elemental mapping up to atomic resolution.
- ζ-Zeta factors for accurate Quantitative analysis.
Designed by JEOL Exclusively for JEOL TEMs
Developed for Ultra-High Resolution TEM:
- NEOARM
- CRYO ARM™ 200
- JEM-F200
- JEM-ACE200F
- JEM-2100Plus
- Monochromated ARM200F
- JEM-ARM300F2
- CRYO ARM™ 300