LV-MOD Imager for Semiconductor Imaging

LIG Nanowise and Nikon Metrology Europe jointly developed the LV-MOD, which is applicable in semiconductor imaging.

Source: LIG Nanowise Limited

Relating to Part numbers
LVMOD-01-NIK
Physical Parameters
Dimension: 160 x 140 x 232 mm
Weight: 2.4 kg
Mounting diameter: 52.5 mm
Mounting depth: 17 mm
Fixing quantity: 3
Fixing type: M4 x 12
Electrical Parameters
LV-MOD Voltage: 15 Vdc
LV-MOD Power: 6 W
LV-MOD Connection: 2.5 (ID), 5.5 (OD)
LV-MOD Earthing: Ground 0 V
Mains Voltage: 100-240 Vac
Mains Frequency: 50/60 Hz
Mains Power: 40 W
Mains Isolation: No. Earth connected to output 0 V.
USB USB Type B
Optical Parameters
Optical Power: 1370 (typical) milliwatts (max)
Optical Peak Wavelength: 440 nm
Optical Bandwidth: 400-700
Optical Risk Group: 2
SMAL Parfocality: No
SMAL AIR Parfocality: No
Environmental
Operating Temp Range: 10-40 °C
Humidity: 85 % RH non-condensing
Storage Temp range: 0-40 °C

 

Spatial resolution down to 60 nm demonstrated using semiconductor samples when coupled with the SMAL lens.

Semiconductor Imaging Application Example

Image Credit: LIG Nanowise Limited

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