The newly developed JEOL JBX-8100FS series spot beam lithography equipment, which represents 50 years of expertise in electron beam lithography, is designed to improve throughput and reduce operating costs.
The JBX-8100FS increases throughput by writing ultrafine patterns more quickly and reducing idle time, particularly during the exposure process.
This novel, high-precision, compact e-beam tool is appropriate for a wide range of applications, from research to production, and its tiny footprint and low power consumption lower the cost of ownership.
Main Features
- Small footprint
- The standard system requires an area of 4.9 m (W) × 3.7 m (D) × 2.6 m (H), which is significantly smaller than conventional systems
- Low power consumption
- Normal operation requires roughly 3 kVA of power, less than one-third of what conventional systems require.
- High throughput
- The system has two exposure modes: high resolution and high throughput, which allow for various patterning applications ranging from ultra-fine processing to small to medium-sized production. It has reduced idle time during exposure while boosting maximum scanning speed from 1.25 to 2.5 times to 125 MHz (the world’s highest level) for high-speed writing.
- Version
- The JBX-8100FS comes in two versions: G1 (entry model) and G2 (full option model). Optional accessories for the G1 model can be added as needed.
- New Functions
- An optional optical microscope allows users to examine patterns on the material without exposing the resist to light. A signal tower is included as standard for visual monitoring of system operation.
- Laser positioning resolution
- Standard stage positions are measured and controlled in 0.6 nm steps, however, an optional upgrade allows for 0.15 nm steps.
- System control
- The versatile Linux® operating system, paired with a modern graphic user interface, enables ease of use. The data preparation program works with both Linux® and Windows®.
Specifications
Source: JEOL USA, Inc.
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| Writing Method |
Spot beam, vector scan, step and repeat |
| Accelerating Voltage |
100 kV (200 kV, 130 kV, 50 kV, 25 kV optional) |
| Scanning speed |
Max 125 MHz |
| Field size |
100 μm × 100 μm (high resolution mode)
1,000 μm × 1,000 μm (high throughput mode) |
| Stage movement |
190 mm × 170 mm |
| Minimum step for stage movement |
0.6 nm (0.15 nm optional) |
| Overlay accuracy |
±9 nm or less (high resolution mode)
±20 nm or less (high throughput mode) |
| Field stitching accuracy |
±9 nm or less (high resolution mode)
±20 nm or less (high throughput mode) |
| Sample size |
Wafers up to 200 mmφ, masks up to 6 inchs, and micro sample pieces of any size |