Atomic Layer Etching — PlasmaPro 100 ALE

The PlasmaPro 100 ALE from Oxford Instruments provides accurate process control of etching for next-generation semiconductor devices. The system's digital/cyclical etch process, specially designed for processes such as recess etching for GaN HEMT applications and nanoscale layer etching, ensures low damage, smooth surfaces.

  • Low damage
  • Smooth etch surface
  • Extensive range of processes and applications
  • Digital or cyclical etch process — etching comparable to ALD
  • Excellent etch depth control
  • Perfect for nanoscale layer etching (for example, 2D Materials)


As layers become thinner to allow for the next-generation of semiconductor devices, there is a need for ever more precise process control to create and manipulate these layers. The PlasmaPro 100 ALE offers this by improving the Cobra ICP platform along with specialized hardware for atomic layer etching.

  • Provides reactive species to the substrate, with an even high conductance path through the chamber — Enables a high gas flow to be utilized while retaining low pressure
  • Variable height electrode — Utilises the 3-dimensional characteristics of the plasma and accommodates substrates up to 10 mm thick at optimum height
  • A fluid-controlled electrode fed by a re-circulating chiller unit — Outstanding substrate temperature control
  • Extensive temperature range electrode (−150 °C to +400 °C) which can be cooled using liquid nitrogen, a fluid re-circulating chiller, or resistively heated — An optional blowout and fluid exchange unit could automate the process of switching modes
  • ICP source sizes range around 65 mm, 180 mm, and 300 mm. It provides process uniformity up to 200 mm wafers
  • Wafer clamping with He backside cooling — Best wafer temperature control
  • RF-powered showerhead with improved gas delivery — Provides uniform plasma processing with LF/RF switching, allowing for the precise control of film stress
  • High pumping capacity — Provides extensive process pressure window


  • Low damage GaN HEMT recess etch for power electronics and RF devices
  • 2D materials patterning or thinning
  • SiO2 and quartz etch
  • Nanostructured SiO2, Si, SiN
  • Solid-state lasers InP etch
  • III-V materials
  • VCSEL GaAs/AlGaAs etch
  • Hard mask deposition and etch for high-brightness LED production

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