The JBX-3050MV series is an electron beam lithography system for mask/reticle fabrication that satisfies the 45–32 nm design rule.
Using advanced technology, this system can write patterns quickly, accurately, and reliably.
Key Product Features
Source: JEOL USA, Inc.
. |
. |
Exposure Method |
Vector scan, Variable-shaped beam |
Accelerating Voltage |
50 kV |
Electron Gun Emitter |
LaB6 single crystal |
Pattan |
≤ ± 4 nm (3 δ) |
Writing Position Accuracy |
≤ ± 10 nm |