JBX-3050MV: Electron Beam Lithography System

The JBX-3050MV series is an electron beam lithography system for mask/reticle fabrication that satisfies the 45–32 nm design rule.

Using advanced technology, this system can write patterns quickly, accurately, and reliably.

Key Product Features

Source: JEOL USA, Inc.

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Exposure Method Vector scan, Variable-shaped beam
Accelerating Voltage 50 kV
Electron Gun Emitter LaB6 single crystal
Pattan ≤ ± 4 nm (3 δ)
Writing Position Accuracy ≤ ± 10 nm

Other Equipment by this Supplier

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